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| 8M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE HYM 328000GD-50/-60 Preliminary Information * * 8 388 608 words by 32-bit organization Fast access and cycle time 50 ns access time 95 ns cycle time (-50 version) 60 ns access time 110 ns cycle time (-60 version) Fast page mode capability with 35 ns cycle time (-50 version) 40 ns cycle time (-60 version) Single + 3.3 V ( 0.3 V) supply Low power dissipation max. 2016 mW active (-50 version) max. 1728 mW active (-60 version) LVCMOS - 3.6 mW standby LVTTL - 28.8 mW standby * * * * * * * * * * CAS-before-RAS refresh, RAS-only-refresh, Self Refresh 4 decoupling capacitors mounted on substrate All inputs, outputs and clock fully TTL compatible 72 pin, dual read-out, one bank, Small Outline DIMM Module Utilizes four 8M x 8 -DRAMs (HYB 3165800T) 4096 refresh cycles / 64 ms Gold contact pad Semiconductor Group 187 11.94 HYM328000GD-50/-60 8M x 32 SO-DIMM The HYM 328000GD -50/-60 is a 32 MByte DRAM module organized as 8 388 608 words by 32-bit in a 72-pin, dual read-out, small outline package comprising four HYB 3165800T 8M x 8 DRAMs in 500 mil wide TSOPII-34 - packages mounted together with four 0.2 F ceramic decoupling capacitors on a PC board. Each HYB 3165800T is described in the data sheet and is fully electrically tested and processed according to Siemens standard quality procedure prior to module assembly. After assembly onto the board, a further set of electrical tests is performed. The density and speed of the module can be detected by the use of presence detect pins. These modules are ideal for portable systems applications where high memory capacity is needed. Ordering Information Type HYM 328000GD -50 HYM 328000GD -60 Pin Names A0-A11 A0-A10 DQ0 - DQ31 RAS0, RAS2 CAS0 - CAS3 WE Vcc Vss PD1 - PD7 N.C. Row Address Input Column Address Inputs Data Input/Output Row Address Strobe Column Address Strobe Read / Write Input Power (+3.3 Volt) Ground Presence Detect Pins No Connection Ordering Code on request on request Package L-DIM-72-2 L-DIM-72-2 Descriptions 50 ns DRAM module 60 ns DRAM module Presence-Detect and ID-pin Thruth Table *: Module HYM 328000GD -50 HYM 328000GD -60 PD1 VSS VSS PD2 VSS VSS PD3 NC NC PD4 NC NC PD5 VSS NC PD6 VSS NC PD7 NC NC note: PD1 .. PD4 : configuration PD5 .. PD6 : speed PD7 : refresh mode (NC = normal refresh) * acccording to JEDEC letter ballot JC-42.5-95 Item #646/651 Semiconductor Group 188 HYM328000GD-50/-60 8M x 32 SO-DIMM Pin Configuration PIN 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 Name VSS DQ1 DQ3 DQ5 DQ7 PD1 A1 A3 A5 A10 DQ8 DQ10 DQ12 DQ14 A11 A8 NC DQ15 PIN 37 39 41 43 45 47 49 51 53 55 57 59 61 63 65 67 69 71 NAME DQ16 VSS CAS2 CAS1 NC WRITE DQ18 DQ20 DQ22 NC DQ25 DQ28 VCC DQ30 NC PD3 PD5 PD7 PIN 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 NAME DQ0 DQ2 DQ4 DQ6 VCC A0 A2 A4 A6 NC DQ9 DQ11 DQ13 A7 VCC A9 RAS2 NC PIN 38 40 42 44 46 48 50 52 54 56 58 60 62 64 66 68 70 72 NAME DQ17 CAS0 CAS3 RAS0 NC NC DQ19 DQ21 DQ23 DQ24 DQ26 DQ27 DQ29 DQ31 PD2 PD4 PD6 VSS Pin2 Pin1 Pin72 Pin71 Front Side Back Side Semiconductor Group 189 HYM328000GD-50/-60 8M x 32 SO-DIMM RAS0 RAS CAS0 CAS OE D1 I/O1-I/O8 DQ0-DQ7 RAS CAS1 CAS OE RAS2 RAS CAS2 CAS OE I/O1-I/O8 DQ8-DQ15 D2 I/O1-I/O8 DQ16-DQ23 D3 RAS CAS3 CAS OE I/O1-I/O8 DQ24-DQ32 D4 WE A0-A11 VCC VSS D1 - D4 D1 - D4 C1-C4 D1 - D4 Block Diagramm Semiconductor Group 190 HYM328000GD-50/-60 8M x 32 SO-DIMM Absolute Maximum Ratings 1) Operating temperature range..............................................................................................0 to 70 C Storage temperature range.........................................................................................- 55 to 150 C Soldering temperature.............................................................................................................260 C Soldering time..............................................................................................................................10 s Input/output voltage..................................................................................-0.5 to min (Vcc+0.5,4.6) V Power supply voltage....................................................................................................-0.5V to 4.6 V Power dissipation......................................................................................................................1.0 W Data out current (short circuit)..................................................................................................50 mA DC Characteristics TA = 0 to 70 C, VSS = 0 V, VCC = 3 V 0.3 V Parameter Input high voltage Input low voltage Output high voltage (LVTTL) Output H" level voltage (Iout = -2mA) Output low voltage (LVTTL) Output L"level voltage (Iout = +2mA) Output high voltage (LVCMOS) Output H" level voltage (Iout = -100uA) Ouput low voltage (LVCMOS) Output L" level voltage (Iout = +100uA) Input leakage current,any input (0 V < Vin < Vcc , all other pins = 0 V Symbol Limit Values min. max. Vcc+0.3 0.8 - 0.4 2.0 - 0.3 2.4 - Unit Note V V V V V V A A 6) 6) 2) 2) VIH VIL VOH VOL VOH VOL II(L) IO(L) ICC1 -50 ns version -60 ns version Vcc-0.2 - 10 - 10 0.2 10 10 Output leakage current (DO is disabled, 0 V < Vout < Vcc ) Average Vcc supply current: - - 560 480 8 mA mA mA 3) 4) 5) (RAS, CAS, address cycling: tRC = tRC min.) Standby Vcc supply current (RAS=CAS= Vih) ICC2 - - ICC3 Average Vcc supply current, during RAS-only refresh cycles: -50 ns version -60 ns version (RAS cycling: CAS = VIH: tRC = tRC min.) - - 560 480 mA mA 3) 5) Semiconductor Group 191 HYM328000GD-50/-60 8M x 32 SO-DIMM DC Characteristics (cont'd) TA = 0 to 70 C, VSS = 0 V, VCC = 3 V 0.3 V Parameter Symbol Limit Values min. max. 340 300 800 mA mA A 3) 4) 5) Unit Note Average Vcc supply current, during fast page mode: -50 ns version -60 ns version ICC4 - - (RAS = VIL, CAS, address cycling: tPC=tPC min.) Standby Vcc supply current (RAS=CAS= Vcc-0.2V) ICC5 - - Average Vcc supply current, during CAS-before- ICC6 RAS refresh mode: -50 ns version -60 ns version (RAS, CAS cycling: tRC = tRC min.) - - - 560 480 800 mA mA A 3) 4) Self Refresh Current Average Power Supply Current during Self Refresh. (CBR cycle with tRAS>TRASSmin, CAS held low, WE = Vcc-0.2V, Address and Din=Vcc-0.2V or 0.2V) ICC7 Semiconductor Group 192 HYM328000GD-50/-60 8M x 32 SO-DIMM SO-DIMM PACKAGE OUTLINES 56.69 FRONT SIDE 3.81 17.78 1 E 44.45 R 2.0 7.62 8.255 71 25.40 1.0 +/- 0.1 2 R 2.0 72 BACK SIDE 1.0 note: mechanical key for supply voltage 5 V E = 6.35 3.3V E = 3.175 1.27 L-DIM-72-2 Preliminary Drawing Semiconductor Group 193 VAKAT ((194)) |
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